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Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime

机译:量子修正电导率和霍尔系数a   脏alGaas / Gaas / alGaas量子阱中的二维电子气:来自   对弹道政权的扩散

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摘要

We report an experimental study of quantum conductivity corrections in a lowmobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAsquantum well in a wide temperature range (1.5K - 110K). This temperature rangecovers both the diffusive and the ballistic interaction regimes for oursamples. It has been therefore possible to study the crossover between theseregimes for both the longitudinal conductivity and the Hall effect. We performa parameter free comparison of our experimental data for the longitudinalconductivity at zero magnetic field, the Hall coefficient, and themagnetoresistivity to the recent theories of interaction-induced corrections tothe transport coefficients. A quantitative agreement between these theories andour experimental results has been found.
机译:我们报告了在宽温度范围(1.5K-110K)的AlGaAs / GaAs / AlGaAsQuanttum阱中低迁移率,高密度二维电子气中量子电导率校正的实验研究。这个温度范围覆盖了我们样品的扩散和弹道相互作用。因此,有可能针对纵向电导率和霍尔效应研究这些方案之间的交叉。我们对实验数据在零磁场下的纵向电导率,霍尔系数和耐磁阻性进行了无参数比较,并与相互作用引起的对输运系数的校正理论进行了比较。这些理论和我们的实验结果之间的定量协议已被发现。

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